APTM100H45STG APTM100H45STG ? rev 3 july, 2006 www.microsemi.com 1 ? 7 o ut1 out2 g1 s1 cr 2a q1 cr 1a cr3b cr1b g2 s2 nt c1 cr2b q2 cr4b 0/vbus cr 4a cr3a g4 g3 s3 s4 q4 ntc2 q3 vbus out1 out2 ntc1 ntc2 g3 s3 vbus g1 s1 g4 g2 s2 0/vbus s4 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . see application note apt0502 on www.microsemi.com s ymbol parameter max ratings unit v dss drain - source breakdown voltage 1000 v t c = 25c 18 i d continuo us drain current t c = 80c 14 i dm pulsed drain current 72 a v gs gate - source voltage 30 v r dson drain - source on resistance 540 m ? p d maximum power dissipation t c = 25c 357 w i ar avalanche current (repetitive and non repetitive) 18 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj v dss = 1000v r dson = 450m ? typ @ tj = 25c i d = 18a @ tc = 25c applicatio n ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate c harge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant f ull bridge series & parallel diodes m osfet power module
APTM100H45STG APTM100H45STG ? rev 3 july, 2006 www.microsemi.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 1000v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 9a 450 540 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gs s gate ? source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 4350 c oss output capacitance 715 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 120 pf q g total gate charge 154 q gs gate ? source charge 26 q gd gate ? drain charge v gs = 10v v bus = 500v i d = 18a 97 nc t d(on) tur n-o n delay ti me 10 t r rise time 12 t d(off) turn-off delay time 121 t f fall time inductive switching @ 125c v gs = 15v v bus = 667v i d = 18a r g = 5 ? 35 ns e on turn-on switching energy 639 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 667v i d = 18a, r g = 5 ? 380 j e on turn-on switching energy 1046 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 667v i d = 18a, r g = 5 ? 451 j series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 200 v t j = 25c 250 i rm maximum reverse leakage current v r =200v t j = 125c 500 a i f dc forward current t c = 85c 30 a i f = 30a 1.1 1.15 i f = 60a 1.4 v f diode forward voltage i f = 30a t j = 125c 0.9 v t j = 25c 24 t rr reverse recovery time t j = 125c 48 ns t j = 25c 33 q rr reverse recovery charge i f = 30a v r = 133v di/dt = 200a/s t j = 125c 150 nc
APTM100H45STG APTM100H45STG ? rev 3 july, 2006 www.microsemi.com 3 ? 7 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v t j = 25c 250 i rm maximum reverse leakage current v r =1000v t j = 125c 500 a i f dc forward current t c = 65c 30 a i f = 30a 1.9 2.3 i f = 60a 2.2 v f diode forward voltage i f = 30a t j = 125c 1.7 v t j = 25c 290 t rr reverse recovery time t j = 125c 390 ns t j = 25c 670 q rr reverse recovery charge i f = 30a v r = 667v di/dt = 200a/s t j = 125c 2350 nc thermal and package characteristics symbol characteristic min typ max unit transistor 0.35 r thjc junction to case thermal resistance diode 1.2 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 t: thermistor temperature r t : thermistor value at t
APTM100H45STG APTM100H45STG ? rev 3 july, 2006 www.microsemi.com 4 ? 7 sp4 package outline (dimensions in mm) all dimensio ns marked " * " are tolerenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com
APTM100H45STG APTM100H45STG ? rev 3 july, 2006 www.microsemi.com 5 ? 7 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 5.5v 6v 6.5v 7v 0 10 20 30 40 50 60 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&8v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c t j =125c 0 10 20 30 40 50 60 70 80 012345678910 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 1020304050 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 9a 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTM100H45STG APTM100H45STG ? rev 3 july, 2006 www.microsemi.com 6 ? 7 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =9a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 0 1 10 100 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 14 0 40 80 120 160 200 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =18a t j =25c
APTM100H45STG APTM100H45STG ? rev 3 july, 2006 www.microsemi.com 7 ? 7 delay times vs current t d(on) t d(off) 0 20 40 60 80 100 120 140 160 5 10152025303540 i d , drain current (a) t d(on) and t d(off) (ns) v ds =667v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 5 10152025303540 i d , drain current (a) t r and t f (ns) v ds =667v r g =5 ? t j =125c l=100h switching energy vs current e on e off 0 0.5 1 1.5 2 5 10152025303540 i d , drain current (a) switching energy (mj) v ds =667 v r g =5 ? t j =125c l=100h e on e off e off 0 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =667v i d =18a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 6 8 10 12 14 16 18 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =667v d=50% r g =5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.20.40.60.8 1 1.21.41.61.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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